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Integrated photonics · Advanced packaging

Research

We design, fabricate and measure photonic devices and advanced packages for AI semiconductors, from materials to systems.

AI 가속기와 데이터센터는 칩 사이를 오가는 데이터의 대역폭과 전력에서 한계를 맞고 있습니다. ASDL은 이 문제를 광 인터커넥트로 풀기 위해, 새로운 재료와 구조를 바탕으로 한 집적광학 소자와 이를 담는 첨단 패키징을 함께 연구하여, Co-Packaged Optics(CPO)와 패널 레벨 패키지로 연결합니다.

AI 반도체 광통신Co-Packaged Optics집적광학

Our vision in more detail: 한국어 · English

Featured · SING

SiN-on-Glass: photonic devices and packaging

유리 기판 위 실리콘 나이트라이드(SiN) 플랫폼에서 저손실 도파로와 MMI, 스위치 같은 광소자를 만들고, 스티칭 도파로와 광섬유·칩 결합 구조로 레티클 하나보다 큰 패널 위에 광 재배선층을 구현합니다.

SiN-on-Glass panel carrying many chiplets, with a cross-section showing laser, EIC on PIC, ASIC, SiN optical redistribution layer, electrical redistribution layer and through-glass vias
SING glass-core package for optical and electrical hybrid integration (concept).
  • Optical RDLSiN waveguides on glass: low loss, high density, multilayer routing and high reliability across the panel.
  • PICSi photonic chips with high-speed optical modulators (MRM, MZM) next to each ASIC.
  • LD · SOA · SwitchLight sources, SOA integration and non-volatile optical switches for the optical network on glass.
  • Fiber-to-GlassOptical coupling from fiber into the glass panel with grating couplers (GC) and edge couplers (EC).
  • Glass-to-PICEvanescent couplers (EVC) between SiN-on-Glass and the Si photonic chip.

Materials

  • SiN on glasspanel-scale substrate
  • a-Si / SiNgrating layer · simulation
  • Bottom metal reflectorcoupling efficiency
  • Ferroelectric-oxide stacknon-volatile switching

Systems

More research

Si PIC modulators, next-generation memory and displays

Photonics · Si PIC

High-speed optical modulators for Si photonic chips

Ring and Mach–Zehnder modulators that turn electrical bits into O-band light, built on Si, SiGe and III-V/Si phase shifters for co-packaged optics.

III-V/SiSiGeMRMMZMO-bandPAM-4
Electronics · Ferroelectric memory

Ferroelectric transistors for non-volatile memory and in-memory computing

FeFETs and FeDRAM cells on amorphous oxide semiconductors, from switching dynamics and stability to computing-in-memory cells.

FeFETFeDRAMMFMISOxide semiconductorComputing-in-memory
Optoelectronics · Display

QD-LED and micro-LED pixels with memory-in-pixel backplanes

Charge-trap and ferroelectric oxide TFTs that hold each pixel's state, with thermoreflectance to map how the pixels heat up.

QD-LEDMicro-LEDMemory-in-pixelCharge-trap TFTThermoreflectance
Facilities

We design, fabricate and measure in-house

Our research team runs its own fabrication and measurement infrastructure for co-packaged optics, silicon photonics and electronic devices, so we can prototype, validate and demonstrate new devices quickly.

ASDL cleanroom with lithography and inspection stations
CleanroomThin-film deposition, lithography, etching
Fiber-coupled photonic chip on a probe stage with an O-band laser source
Wafer-scale Photonics MeasurementFiber-to-chip coupling, O-band laser sources, etc.
Two researchers inspecting a wafer under an optical microscope
PIC InspectionOptical microscopy of fabricated circuits
ASDL measurement laboratory with probe stations and instrument racks
Electrical & Optical Measurement Lab.Probe stations, parameter analyzers, etc.
Researchers holding processed SiN-on-glass and silicon wafers
Wafer-level ProcessingSiN-on-Glass and silicon wafers
Partners

Collaborators and sponsors

  • 두뇌한국(BK, Brain Korea)21
  • 산업통상자원부
  • 한국연구재단
  • ETRI 한국전자통신연구원
  • KIST 한국과학기술연구원
  • IMEC (벨기에, 반도체연구소)