Wafer-level silicon nitride on glass (SING) photonic platform for high-density optical RDLs, featuring low-loss 100 µm bends, stitched routing, and 106 Gbps PAM-4-ready performance for CPO.
Abstract
We present silicon nitride photonics on glass (SING), demonstrated at the wafer-level, establishing its feasibility for high-density optical redistribution layers (RDLs) in panel-level packaging. Demonstrated passive components support 106 Gbps transmission, enabling scalable wafer-level optical interconnects with grating couplers, ring resonators, MMI couplers, MZIs, and stitched waveguides. With a compact 100 µm bend radius, SING enables a 10× higher density than LDW or IOX glass platforms, while remaining compatible with large-panel processing. This positions SING as a promising and scalable solution for next-generation optical RDLs. [Link to Journal website (Optics Express)]
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